Rev. Date Page Summary 1.00 2.00 2.10 3.00 Mar 01, 1996 Aug 28, 2001 Sep 06, 2001 Sep 14, 2012 – – – Throughout p.1 p.2 p.2 p.4 First edition issued Second edition issued Second V1 edition issued The company name is changed to Renesas Electronics Corporation. Modification of ORDERING INFORMATION Modification of ELECTRICAL CHARACTERISTICS Modification.
• Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA
• Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz
• 4-pin power minimold package with improved gain from the 2SC4536
• Magazine case
• 12 mm wide embossed taping
• Collector face the perforation side of the tape
N.
The 2SC5337 is a high-frequency transistor designed for a low distortion and low noise amplifier on the VHF to UHF band,.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC5331 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
2 | 2SC5332 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
3 | 2SC5333 |
Sanken electric |
NPN TRANSISTOR | |
4 | 2SC5335 |
Panasonic Semiconductor |
NPN TRANSISTOR | |
5 | 2SC5336 |
NEC |
NPN TRANSISTOR | |
6 | 2SC5336 |
Renesas |
NPN SILICON RF TRANSISTOR | |
7 | 2SC5338 |
NEC |
NPN TRANSISTOR | |
8 | 2SC5338 |
Renesas |
NPN SILICON RF TRANSISTOR | |
9 | 2SC5339 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
10 | 2SC5339 |
SavantIC |
SILICON POWER TRANSISTOR | |
11 | 2SC5339 |
INCHANGE |
NPN Transistor | |
12 | 2SC5300 |
Sanyo Semicon Device |
NPN TRANSISTOR |