of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incur.
• High gain: S21e = 12 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz
2
• 4-pin power minimold package with improved gain from the 2SC3357
ORDERING INFORMATION
Part Number 2SC5336 2SC5336-T1 Quantity 25 pcs (Non reel) 1 kpcs/reel
• Magazine case
• 12 mm wide embossed taping
• Collector face the perforation side of the tape Supplying Form
Remark To order evaluation samples, consult your NEC sales representative. Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total.
PRELIMINARY DATA SHEET Silicon Transistor 2SC5336 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLI.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC5331 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
2 | 2SC5332 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
3 | 2SC5333 |
Sanken electric |
NPN TRANSISTOR | |
4 | 2SC5335 |
Panasonic Semiconductor |
NPN TRANSISTOR | |
5 | 2SC5337 |
NEC |
NPN TRANSISTOR | |
6 | 2SC5337 |
Renesas |
NPN SILICON RF TRANSISTOR | |
7 | 2SC5338 |
NEC |
NPN TRANSISTOR | |
8 | 2SC5338 |
Renesas |
NPN SILICON RF TRANSISTOR | |
9 | 2SC5339 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
10 | 2SC5339 |
SavantIC |
SILICON POWER TRANSISTOR | |
11 | 2SC5339 |
INCHANGE |
NPN Transistor | |
12 | 2SC5300 |
Sanyo Semicon Device |
NPN TRANSISTOR |