2SC5255 - Toshiba Semiconductor

2SC5255 NPN TRANSISTOR

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5255 2SC5255 VHF~UHF Band Low Noise Amplifier Applications Unit: mm · Low noise figure: NF = 1.5dB (f = 2 GHz) · High gain: Gain = 8.5dB (f = 2 GHz) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Coll.

Features

5 3 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Output capacitance Reverse transfer capacitance ICBO VCB = 10 V, IE = 0 IEBO VEB = 1 V, IC = 0 hFE (Note 1) VCE = 5 V, IC = 20 mA Cob VCB = 5 V, IE = 0, f = 1 MHz Cre (Note 2) ¾ ¾ 50 ¾ ¾ ¾1 ¾1 ¾ 160 0.5 ¾ 0.4 0.8 mA mA pF pF Note 1: hFE classification R: 50~100, O: 80~160 Note 2: Cre is measured by 3 terminal method with capacitance bridge. 1 2003-03-24 Marking 2SC5255 2 2003-03-24 2SC5255 3 2003-03-24 2SC5.