2SC5251 - Hitachi Semiconductor

2SC5251 Silicon NPN Transistor

2SC5251 Silicon NPN Triple Diffused Planar Preliminary Application Character display horizontal deflection output Features • High breakdown voltage VCBO = 1500 V • High speed switching tf = 0.2 µsec (typ) • Isolated package TO-3P•FM (N) Outline TO-3PFM (N) 1. Base 2. Collector 3. Emitter 1 2 3 2SC5251 Absolute Maximum Ratings (Ta = 25°C) Item Collec.

Features

• High breakdown voltage VCBO = 1500 V
• High speed switching tf = 0.2 µsec (typ)
• Isolated package TO-3P
•FM (N) Outline TO-3PFM (N) 1. Base 2. Collector 3. Emitter 1 2 3 2SC5251 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC IC(peak) PC
* Tj Tstg 1 Ratings 1500 800 6 12 24 50 150
  –55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C.