2SC5252 - Hitachi Semiconductor

2SC5252 NPN TRANSISTOR

2SC5252 Silicon NPN Triple Diffused Planar ADE-208-391A (Z) 2nd. Edition Application Character display horizontal deflection output Features • High breakdown voltage VCBO = 1500 V • High speed switching tf ≤ 0.15 µsec(typ.) • Isolated package TO–3P•FM Outline TO-3PFM 1. Base 2. Collector 3. Emitter 1 2 3 2SC5252 Absolute Maximum Ratings (Ta = 25°C) .

Features

• High breakdown voltage VCBO = 1500 V
• High speed switching tf ≤ 0.15 µsec(typ.)
• Isolated package TO
  –3P
•FM Outline TO-3PFM 1. Base 2. Collector 3. Emitter 1 2 3 2SC5252 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. TC = 25°C Symbol VCBO VCEO VEBO IC IC(peak) PC
* Tj Tstg 1 Ratings 1500 800 6 15 30 50 150
  –55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Mi.