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Ordering number:EN5035 NPN Epitaxial Planar Silicon Transistor 2SC5228 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features · Low noise : NF=1.0dB typ (f=1GHz). · High gain : S21e2=13.5dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ. Package Dimensions unit:mm 2110A 1.9 [2SC5228] 0.95 0.95 0.4 43 0.16 0 to 0.1 1.5 0.5 2.5 Specificati.
· Low noise : NF=1.0dB typ (f=1GHz).
· High gain : S21e2=13.5dB typ (f=1GHz).
· High cutoff frequency : fT=7GHz typ.
Package Dimensions
unit:mm 2110A
1.9 [2SC5228] 0.95 0.95 0.4 43
0.16 0 to 0.1
1.5 0.5 2.5
Specifications
12
0.95 0.85 2.9
0.6
0.8 1.1
0.5
1 : Emitter 2 : Collector 3 : Emitter 4 : Base SANYO : CP4
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC PC Tj
Tstg
Electrical Characteristics .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC522 |
Toshiba |
SILICON NPN TRANSISTOR |
|
| 2 | 2SC5223 |
Panasonic Semiconductor |
NPN TRANSISTOR |
|
| 3 | 2SC5225 |
Hitachi Semiconductor |
NPN TRANSISTOR |
|
| 4 | 2SC5226 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 5 | 2SC5226A |
Sanyo |
NPN Epitaxial Planar Silicon Transistor |
|
| 6 | 2SC5226A |
ON Semiconductor |
RF Transistor |
|
| 7 | 2SC5227 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 8 | 2SC5227 |
Inchange Semiconductor |
Silicon NPN Transistor |
|
| 9 | 2SC5227A |
Sanyo |
NPN Epitaxial Planar Silicon Transistor |
|
| 10 | 2SC5227A |
ON Semiconductor |
RF Transistor |
|
| 11 | 2SC5229 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 12 | 2SC5200 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|