SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) 2SC524, HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. REGULATOR APPLICATIONS. FEATURES • High Breakdown Voltage : VCEO=100V (2SC522) : V CE0= 60V (2SC524) • Useful attachment for Heat sink. • Various Uses for Medium Power : I C=1.5A (Max.), P C=10W (Max.) gfe.39MAX SZfe.5MAX Uni.
• High Breakdown Voltage : VCEO=100V (2SC522) : V CE0= 60V (2SC524)
• Useful attachment for Heat sink.
• Various Uses for Medium Power
: I C=1.5A (Max.), P C=10W (Max.)
gfe.39MAX SZfe.5MAX
Unit in mm
00.45
il 11 l
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. ^.
,
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector- Base Voltage
2SC522 2SC524
Collector- Emitter Voltage
Emitter-Base Voltage
2SC522 2SC524
Collector Current
Base Current Collector Power Dissipation
(Tv=?s°r) Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
v CE0 VEBO ic IB PC
Tj T stg
RATING 140 100 100 60
5
1.5 300
10 175 -65VL75
UNIT
V
V
V A mA .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC5200 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
2 | 2SC5200 |
UTC |
NPN EPITAXIAL SILICON TRANSISTOR | |
3 | 2SC5200 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor | |
4 | 2SC5200 |
Thinki Semiconductor |
150 Watt Silicon NPN Power Transistors | |
5 | 2SC5200 |
ON Semiconductor |
NPN Transistor | |
6 | 2SC5200 |
STMicroelectronics |
NPN Transistor | |
7 | 2SC5200 |
INCHANGE |
NPN Transistor | |
8 | 2SC5200A |
JILIN SINO |
Silicon NPN Transistor | |
9 | 2SC5200B |
JILIN SINO |
Silicon NPN Transistor | |
10 | 2SC5200H |
INCHANGE |
NPN Transistor | |
11 | 2SC5200N |
Toshiba |
NPN Transistor | |
12 | 2SC5200N |
INCHANGE |
NPN Transistor |