2SC5223 - Panasonic Semiconductor

2SC5223 NPN TRANSISTOR

Power Transistors 2SC5223 Silicon NPN triple diffusion planar type Unit: mm For high-speed switching 7.3± 0.1 1.8± 0.1 6.5± 0.1 5.3± 0.1 4.35± 0.1 2.3± 0.1 0.5± 0.1 2.5± 0.1 0.8max 0.93±0.1 1.0± 0.1 0.1± 0.05 0.5± 0.1 q q High collector to base voltage VCBO High collector to emitter VCEO 0.75± 0.1 2.3± 0.1 4.6± 0.1 s Absolute Maximum Ratings Para.

Features

Unit µA µA V V V 1.0 1.5 V V 1 Power Transistors PC — Ta 12 Without heat sink 600 Ta=25˚C 500 2SC5223 IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 10 IC/IB=10 3 1 TC=100˚C 0.3 25˚C 0.1
  –25˚C 0.03 0.01 0.003 0.001 0.001 0.003 VCE(sat) — IC Collector power dissipation PC (W) 10 Collector current IC (A) IB=6mA 400 5mA 4mA 3mA 2mA 1mA 8 6 300 4 200 2 100 0 0 40 80 120 160 200 0 0 1 2 3 4 5 6 0.01 0.03 0.1 0.3 1 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) — IC 100 600 hFE — IC 120 Cob — VCB Collect.