Transistors High Voltage Switching Transistor (400V, 2A) 2SC3969 / 2SC5161 FFeatures 1) Low VCE(sat). VCE(sat) = 0.15V (Typ.) (IC / IB = 1A / 0.2A) 2) High breakdown voltage. VCEO = 400V 3) Fast switching. tr = 1.0µs (IC = 0.8A) FStructure Three-layer, diffused planar type NPN silicon transistor FExternal dimensions (Units: mm) (96-698-C14) 236 Transisto.
1) Low VCE(sat). VCE(sat) = 0.15V (Typ.) (IC / IB = 1A / 0.2A) 2) High breakdown voltage. VCEO = 400V 3) Fast switching. tr = 1.0µs (IC = 0.8A) FStructure Three-layer, diffused planar type NPN silicon transistor FExternal dimensions (Units: mm) (96-698-C14) 236 Transistors FAbsolute maximum ratings (Ta = 25_C) 2SC3969 / 2SC5161 FElectrical characteristics (Ta = 25_C) FPackaging specifications and hFE hFE values are classified as follows : 237 Transistors FElectrical characteristic curves 2SC3969 / 2SC5161 238 Transistors 2SC3969 / 2SC5161 FSwitching characteristics measurement ci.
SMD Type High Voltage Switching Transistor 2SC5161 TO-252 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC5168 |
ETC |
SILICON NPN DUAL TRANSISTOR | |
2 | 2SC5169 |
ETC |
DUAL TRANSISTOR | |
3 | 2SC510 |
Toshiba |
SILICON NPN TRANSISTOR | |
4 | 2SC5100 |
Sanken electric |
NPN TRANSISTOR | |
5 | 2SC5100 |
SavantIC |
SILICON POWER TRANSISTOR | |
6 | 2SC5100 |
INCHANGE |
NPN Transistor | |
7 | 2SC5101 |
Sanken electric |
NPN TRANSISTOR | |
8 | 2SC5101 |
SavantIC |
SILICON POWER TRANSISTOR | |
9 | 2SC5101 |
INCHANGE |
NPN Transistor | |
10 | 2SC5103 |
Rohm |
High speed switching transistor | |
11 | 2SC5103 |
INCHANGE |
NPN Transistor | |
12 | 2SC5104 |
Panasonic Semiconductor |
NPN Transistor |