2SC5104 - Panasonic Semiconductor

2SC5104 NPN Transistor

Power Transistors 2SC5104 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 8.5±0.2 Unit: mm 3.4±0.3 6.0±0.2 1.0±0.1 ■ Features 3.0–+00..24 4.4±0.5 14.4±0.5 10.0±0.3 1.5±0.1 • High-speed switching 1.5–+00.4 • High collector-base voltage (Emitter open) VCBO • Wide safe operation area • Satisfactory linearity .

Features

3.0
  –+00..24 4.4±0.5 14.4±0.5 10.0±0.3 1.5±0.1
• High-speed switching 1.5
  –+00.4
• High collector-base voltage (Emitter open) VCBO
• Wide safe operation area
• Satisfactory linearity of forward current transfer ratio hFE
• N type package enabling direct soldering of the radiating fin to the / printed circuit board, etc. of small electronic equipment 4.4±0.5 2.0±0.5 0 to 0.4 0.8±0.1 2.54±0.3 1.4±0.1 5.08±0.5 R = 0.5 R = 0.5 1.0±0.1 0.4±0.1 123 (8.5) (6.0) 1.3
■ Absolute Maximum Ratings TC = 25°C e e) Parameter Symbol Rating Unit (7.6) (1.5) c e. d typ Collector-base voltage (Em.