2SC5103 Transistors High speed switching transistor (60V, 5A) 2SC5103 !Features 1) Low VCE(sat) (Typ. 0.15V at IC / IB = 3 / 0.15A) 2) High speed switching (tf : Typ. 0.1 µs at IC = 3A) 3) Wide SOA. (safe operating area) 4) Complements the 2SA1952. !External dimensions (Units : mm) 0.75 5.5 1.5 (3) (2) (1) 2.3 0.9 0.9 0.65 2.3 5.1 6.5 C0.5 1.0 0..
1) Low VCE(sat) (Typ. 0.15V at IC / IB = 3 / 0.15A) 2) High speed switching (tf : Typ. 0.1 µs at IC = 3A) 3) Wide SOA. (safe operating area) 4) Complements the 2SA1952. !External dimensions (Units : mm) 0.75 5.5 1.5 (3) (2) (1) 2.3 0.9 0.9 0.65 2.3 5.1 6.5 C0.5 1.0 0.5 0.5 1.5 2.5 9.5 !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature ∗ Single pulse Pw=100ms ROHM : CPT3 EIAJ : SC-63 Unit V V V A(DC) A(Pulse) ∗ W W(Tc=25°C) °C °C .
·High Collector Current -IC= 5A ·Low Collector Saturation Voltage ·Complement to Type 2SA1952 ·Minimum Lot-to-Lot variat.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC510 |
Toshiba |
SILICON NPN TRANSISTOR | |
2 | 2SC5100 |
Sanken electric |
NPN TRANSISTOR | |
3 | 2SC5100 |
SavantIC |
SILICON POWER TRANSISTOR | |
4 | 2SC5100 |
INCHANGE |
NPN Transistor | |
5 | 2SC5101 |
Sanken electric |
NPN TRANSISTOR | |
6 | 2SC5101 |
SavantIC |
SILICON POWER TRANSISTOR | |
7 | 2SC5101 |
INCHANGE |
NPN Transistor | |
8 | 2SC5104 |
Panasonic Semiconductor |
NPN Transistor | |
9 | 2SC5106 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
10 | 2SC5107 |
Toshiba Semiconductor |
NPN Transistor | |
11 | 2SC5108 |
Toshiba Semiconductor |
NPN Transistor | |
12 | 2SC5108FT |
Toshiba Semiconductor |
NPN TRANSISTOR |