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www.DataSheet4U.com Power Transistors 2SC5128 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 s Features q q q q φ3.2±0.1 9.9±0.3 2.9±0.2 4.1±0.2 8.0±0.2 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package with outstanding ins.
q q q q
φ3.2±0.1
9.9±0.3
2.9±0.2
4.1±0.2 8.0±0.2 Solder Dip
High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 800 800 500 8 10 5 3 40 2 150
–55 to +150 Unit V V V V A A A W ˚C ˚C
15.0±0.3
3.0±0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature .
2SC5128 - INCHANGE
·Collector–Emitter Breakdown Voltage : V(BR)CEO= 500V(Min) ·High Speed Switching ·Full-pack package with outstanding ins.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC512 |
Toshiba |
SILICON NPN TRANSISTOR |
|
| 2 | 2SC5121 |
Panasonic Semiconductor |
NPN Transistor |
|
| 3 | 2SC5122 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 4 | 2SC5124 |
Sanken electric |
NPN TRANSISTOR |
|
| 5 | 2SC5124 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SC5124 |
INCHANGE |
NPN Transistor |
|
| 7 | 2SC5125 |
Mitsubishi Electric Semiconductor |
NPN TRANSISTOR |
|
| 8 | 2SC5127 |
Panasonic Semiconductor |
NPN TRANSISTOR |
|
| 9 | 2SC5127A |
Panasonic Semiconductor |
NPN TRANSISTOR |
|
| 10 | 2SC5129 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 11 | 2SC5129 |
Toshiba |
Silicon NPN Transistor |
|
| 12 | 2SC5129 |
SavantIC |
SILICON POWER TRANSISTOR |
|