TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications 2SC5122 Unit: mm • High breakdown voltage: VCEO = 400 V • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 20 mA, IB = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 400 V Collector-emitt.
olute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 http://store.iiic.cc/ 2009-12-21 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Collector output capacitance Symbol Test Condition ICBO IEBO V .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC512 |
Toshiba |
SILICON NPN TRANSISTOR | |
2 | 2SC5121 |
Panasonic Semiconductor |
NPN Transistor | |
3 | 2SC5124 |
Sanken electric |
NPN TRANSISTOR | |
4 | 2SC5124 |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | 2SC5124 |
INCHANGE |
NPN Transistor | |
6 | 2SC5125 |
Mitsubishi Electric Semiconductor |
NPN TRANSISTOR | |
7 | 2SC5127 |
Panasonic Semiconductor |
NPN TRANSISTOR | |
8 | 2SC5127A |
Panasonic Semiconductor |
NPN TRANSISTOR | |
9 | 2SC5128 |
Panasonic Semiconductor |
Silicon NPN Transistor | |
10 | 2SC5128 |
INCHANGE |
NPN Transistor | |
11 | 2SC5129 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
12 | 2SC5129 |
Toshiba |
Silicon NPN Transistor |