2SC5127 - Panasonic Semiconductor

2SC5127 NPN TRANSISTOR

Power Transistors 2SC5127, 2SC5127A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 s Features q q q q 4.1±0.2 8.0±0.2 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package with outstanding insulation, which.

Features

q q q q 4.1±0.2 8.0±0.2 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C) Ratings 800 900 800 900 500 8 3.0 1.5 0.5 25 2 150
  –55 to +150 Unit V 15.0±0.3 3.0±0.2 Parameter Collector to base voltage Collector to 2SC5127 2SC5127A 2SC5127 Symbol VCBO VCES VCEO VEBO ICP IC IB 13.7
  –0.2 +0.5 s Absolute Maximum Ratings 1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4 2.6±0.1 0.7±0.1 emitter voltage 2SC5127A Collector to emitter vol.