TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5111 2SC5111 For VCO Application Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range VCBO.
and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Transition frequency Insertion gain Output capacitance Reverse transfer capacitance Collector-base time constant ICBO IEBO VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 hFE (Note 1) VCE = 5 V, IC = 5 mA fT ⎪S21e⎪2 VCE = 5 V, IC = 5 mA VCE = 5 V, IC = 5 mA, f = 1 GHz Cob Cre Cc・rbb’ VCB = 5 V, IE = 0, f = 1 MHz (Note 2) V.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC5110 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
2 | 2SC5111FT |
Toshiba Semiconductor |
NPN TRANSISTOR | |
3 | 2SC5114 |
ETC |
TRANSISTORS | |
4 | 2SC5116 |
Inchange Semiconductor |
Silicon NPN Transistor | |
5 | 2SC510 |
Toshiba |
SILICON NPN TRANSISTOR | |
6 | 2SC5100 |
Sanken electric |
NPN TRANSISTOR | |
7 | 2SC5100 |
SavantIC |
SILICON POWER TRANSISTOR | |
8 | 2SC5100 |
INCHANGE |
NPN Transistor | |
9 | 2SC5101 |
Sanken electric |
NPN TRANSISTOR | |
10 | 2SC5101 |
SavantIC |
SILICON POWER TRANSISTOR | |
11 | 2SC5101 |
INCHANGE |
NPN Transistor | |
12 | 2SC5103 |
Rohm |
High speed switching transistor |