TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5110 2SC5110 For VCO Application Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range VCBO.
vidual Weight: 6 mg (typ.) reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2010-04-14 2SC5110 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Transition frequency Insertion gain Output capacitance Reverse transfer capacitance Collector-base time constant ICBO IEBO VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 hFE (Note 1) VCE = 5 V, IC = 5 mA fT ⎪S21e⎪2 VCE = 5 V, IC = 5 mA VCE = 5 V, IC = 5 mA, f = 1 GHz Cob Cre Cc・rbb’ VCB = 5 V, IE = 0,.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC5111 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
2 | 2SC5111FT |
Toshiba Semiconductor |
NPN TRANSISTOR | |
3 | 2SC5114 |
ETC |
TRANSISTORS | |
4 | 2SC5116 |
Inchange Semiconductor |
Silicon NPN Transistor | |
5 | 2SC510 |
Toshiba |
SILICON NPN TRANSISTOR | |
6 | 2SC5100 |
Sanken electric |
NPN TRANSISTOR | |
7 | 2SC5100 |
SavantIC |
SILICON POWER TRANSISTOR | |
8 | 2SC5100 |
INCHANGE |
NPN Transistor | |
9 | 2SC5101 |
Sanken electric |
NPN TRANSISTOR | |
10 | 2SC5101 |
SavantIC |
SILICON POWER TRANSISTOR | |
11 | 2SC5101 |
INCHANGE |
NPN Transistor | |
12 | 2SC5103 |
Rohm |
High speed switching transistor |