2SC5108FT - Toshiba Semiconductor

2SC5108FT NPN TRANSISTOR

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5108FT 2SC5108FT For VCO Application Absolute Maximum Ratings (Ta = 25°C) Unit: mm Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range V.

Features

y test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-1B1A Weight: 2.2mg (typ.) Characteristics Collector cut-off current Emitter cut-off current DC current gain Transition frequency Insertion gain Output capacitance Reverse transfer capacitance Collector-base time constant Symbol Test Condition Min Typ. Max Unit ICBO VCB = 10 V, IE = 0 IEBO VEB = 1 V, IC = 0 hFE (Note 1) VCE = 5 V, IC = 5 mA fT ⎪S21e⎪2 Cob Cre Cc･rbb’ VCE = 5 V, IC = 5 mA VCE = 5 V, IC = 5 mA, f = 1 GHz VCB = 5 V, IE = 0, f = 1 MHz (Note 2) VCB = 5.