2SC5057 - Hitachi Semiconductor

2SC5057 Silicon NPN Triple Diffused Planar Transistor

2SC5057 Silicon NPN Triple Diffused Planar Application HDTV horizontal deflection output Features • High breakdown voltage VCBO = 1700 V Outline TO-3PL 1 2 3 1. Base 2. Collector 3. Emitter 2SC5057 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector surge c.

Features

• High breakdown voltage VCBO = 1700 V Outline TO-3PL 1 2 3 1. Base 2. Collector 3. Emitter 2SC5057 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector surge current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC IC(surge) PC
*1 Tj Tstg Ratings 1700 900 6 20 25 200 150
  –55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Collector to emitter breakdown V(BR)CEO voltage 900 Emi.