SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE AMPLIFIER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES • High Breakdown Voltage : VCEQ=300V (2SC505) : VCEO=200V (2SC506) 2SC505' 2SC506, Unit in mm S& 9.39 MAX MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage 2SC505 2SC506 SYMBOL v CBO RATING 300 200 UNIT V Co.
• High Breakdown Voltage : VCEQ=300V (2SC505)
: VCEO=200V (2SC506)
2SC505' 2SC506,
Unit in mm
S& 9.39 MAX
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
Collector-Base Voltage
2SC505 2SC506
SYMBOL v CBO
RATING 300 200
UNIT V
Collector- Emitter Voltage
2SC505 2SC506
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
V CEO
v EBO ic IB pC T
i
Tstg
300 V 200
3V
1. EMITTER 2. BASE
200 mA
3. COLLECTOR (CASE)
50 mA JEDEC
600 mW
TO-39
175 °C
TC-5, TB-5B
-65M.75
°C
TOSHIBA
ELECTRICAL CHARACTERISTICS (Ta=2.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC5000 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
2 | 2SC5001 |
ROHM |
NPN 10A 20V Middle Power Transistor | |
3 | 2SC5002 |
Sanken electric |
NPN TRANSISTOR | |
4 | 2SC5002 |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | 2SC5002 |
INCHANGE |
NPN Transistor | |
6 | 2SC5003 |
Sanken electric |
NPN TRANSISTOR | |
7 | 2SC5003 |
SavantIC |
SILICON POWER TRANSISTOR | |
8 | 2SC5004 |
NEC |
NPN TRANSISTOR | |
9 | 2SC5005 |
NEC |
NPN TRANSISTOR | |
10 | 2SC5006 |
NEC |
NPN TRANSISTOR | |
11 | 2SC5006 |
INCHANGE |
NPN Transistor | |
12 | 2SC5006 |
CEL |
NPN Transistor |