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SMD Type Medium Power Transistor 2SC5053 Transistors Features Low saturation voltage, typically VCE(sat) = 0.12V at IC / IB = 500mA / 50mA. PC=2W (on 40×40×0.7mm ceramic board). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC IC (Pulse) *1 PC PC * J.
Low saturation voltage, typically VCE(sat) = 0.12V at IC / IB = 500mA / 50mA. PC=2W (on 40×40×0.7mm ceramic board).
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC IC (Pulse)
*1 PC PC
* Junction temperature Storage temperature
*1. Single pulse, Pw=100ms, duty=1/2.
*2. 40X40X0.7mm Ceramic board. Tj Tstg
2
Rating -60 -50 -5 -1 -2 0.5 2 150 -55 to +150
Unit V V V A A W W
Collector power dissipation
Electrical Characteristics Ta = 25
Parameter Collector-base voltage Collector-emitter vo.
2SC5053 - Rohm
Transistors 2SC5053 Medium power transistor (50V, 1A) 2SC5053 zFeatures 1) Low saturation voltage, typically VCE(sat.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC505 |
Toshiba |
SILICON NPN TRANSISTOR |
|
| 2 | 2SC5050 |
Hitachi Semiconductor |
NPN TRANSISTOR |
|
| 3 | 2SC5050 |
Renesas |
Silicon NPN Transistor |
|
| 4 | 2SC5051 |
Hitachi Semiconductor |
NPN TRANSISTOR |
|
| 5 | 2SC5051 |
Renesas |
Silicon NPN Transistor |
|
| 6 | 2SC5052 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 7 | 2SC5057 |
Hitachi Semiconductor |
Silicon NPN Triple Diffused Planar Transistor |
|
| 8 | 2SC5000 |
Toshiba Semiconductor |
NPN TRANSISTOR |
|
| 9 | 2SC5001 |
ROHM |
NPN 10A 20V Middle Power Transistor |
|
| 10 | 2SC5002 |
Sanken electric |
NPN TRANSISTOR |
|
| 11 | 2SC5002 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 12 | 2SC5002 |
INCHANGE |
NPN Transistor |
|