·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min) ·Fast Switching Speed ·Collector-Emitter Saturation Voltage: VCE(sat)= 0.8V(Max.)@ IC= 4.0A APPLICATIONS ·Designed for use in high-voltage, high-speed , power switching in inductive circuit , they are particularly suited for 115 and 220V switchmode applications such as switching regulator’s, inverte.
ee Datasheet http://www.datasheet4u.com/ INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SC4977 MAX UNIT VCEO(SUS) V(BR)CBO V(BR)EBO Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC= 0.1A; IB= 0 IC= 1mA; IE= 0 IE= 1mA; IC= 0 IC= 4A; IB= 0.8A IC= 4A; IB= 0.8A VCB= 450V; IE= 0 VEB= 8V; IC= 0 IC= 4A ; VCE= 5V 400 450 8 0.8 1.2 V V V .
·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min) ·Fast Switching Speed ·Collector-Emitter Saturation Voltage:.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC497 |
ETC |
Silicon NPN Transistor | |
2 | 2SC4976 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
3 | 2SC4978 |
Shindengen Electric Mfg.Co.Ltd |
Switching Power Transistor | |
4 | 2SC4979 |
Shindengen Electric Mfg.Co.Ltd |
Switching Power Transistor | |
5 | 2SC4900 |
Hitachi Semiconductor |
NPN TRANSISTOR | |
6 | 2SC4901 |
Hitachi Semiconductor |
NPN TRANSISTOR | |
7 | 2SC4901 |
Inchange Semiconductor |
Silicon NPN Transistor | |
8 | 2SC4901 |
Renesas |
Silicon NPN Transistor | |
9 | 2SC4901YK |
INCHANGE |
NPN Transistor | |
10 | 2SC4905 |
Hitachi Semiconductor |
Silicon NPN Bipolar Transistor | |
11 | 2SC4907 |
Sanken electric |
NPN TRANSISTOR | |
12 | 2SC4907 |
SavantIC |
SILICON POWER TRANSISTOR |