2SC4797 - Hitachi Semiconductor

2SC4797 NPN TRANSISTOR

2SC4797 Silicon NPN Triple Diffused Application TV / character display horizontal deflection output TO–3PFM Features • High speed switching tf ≤ 0.6 µs • High breakdown voltage VCBO = 1700 V • Isolated package TO–3PFM 1 2 3 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Em.

Features

• High speed switching tf ≤ 0.6 µs
• High breakdown voltage VCBO = 1700 V
• Isolated package TO
  –3PFM 1 2 3 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector surge current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC ic(surge) PC
*1 Tj Tstg Rating 1700 900 6 8 20 50 150
  –55 to +150 Unit V V V A A W °C °C ——————————————————————————————————————————— ————————————————————————————————————————.