·With TO-220F package ·Complement to type 2SA1837 ·High transition frequency APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collecto.
ctor cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=10mA ; IB=0 IC=0.5A IB=50mA IC=0.5A ; VCE=5V VCB=230V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IE=0; VCB=10V;f=1MHz IC=0.1A ; VCE=10V 100 MIN 230 2SC4793 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE COB fT TYP. MAX UNIT V 1.5 1.0 1.0 1.0 320 20 100 V V µA µA pF MHz 2 www.datasheet4u.com SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4793 Fig.2 Outline dimensions 3 www.datasheet4u.com SavantIC Semiconductor Product Specificat.
UNISONIC TECHNOLOGIES CO., LTD 2SC4793 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR FEATURES *High transition fre.
TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4793 Power Amplifier Applications Driver Stage Amplifier Applications .
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 230V(Min) ·High Current-Gain Bandwidth Product ·Complement to Type 2SA.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC4791 |
Hitachi Semiconductor |
NPN TRANSISTOR | |
2 | 2SC4793AF |
NELL SEMICONDUCTOR |
High Frequency NPN Power Transistor | |
3 | 2SC4793D |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor | |
4 | 2SC4796 |
Hitachi Semiconductor |
Silicon NPN Transistor | |
5 | 2SC4796 |
INCHANGE |
NPN Transistor | |
6 | 2SC4797 |
Hitachi Semiconductor |
NPN TRANSISTOR | |
7 | 2SC4799 |
INCHANGE |
NPN Transistor | |
8 | 2SC4702 |
Hitachi Semiconductor |
NPN TRANSISTOR | |
9 | 2SC4702 |
Renesas |
NPN Transistor | |
10 | 2SC4702 |
Kexin |
NPN Transistor | |
11 | 2SC4703 |
INCHANGE |
NPN Transistor | |
12 | 2SC4703 |
NEC |
NPN TRANSISTOR |