2SC4791 - Hitachi Semiconductor

2SC4791 NPN TRANSISTOR

2SC4791 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 10 GHz Typ. • High gain, low noise figure PG = 15.5 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline MPAK-4 2 3 1 4 1. Collector 2. Emitter 3. Base 4. Emitter 2SC4791 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Coll.

Features

• High gain bandwidth product fT = 10 GHz Typ.
• High gain, low noise figure PG = 15.5 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline MPAK-4 2 3 1 4 1. Collector 2. Emitter 3. Base 4. Emitter 2SC4791 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 8 1.5 20 150 150
  –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector cutoff current Symbol I CBO I CEO.