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2SC4784 - Hitachi Semiconductor

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2SC4784 NPN TRANSISTOR

2SC4784 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 10 GHz Typ. • High gain, low noise figure PG = 15.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline CMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC4784 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitt.

Features


• High gain bandwidth product fT = 10 GHz Typ.
• High gain, low noise figure PG = 15.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline CMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC4784 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 8 1.5 20 100 150
  –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector cutoff current Symbol I CBO I CEO Emitter cutof.

The same part from a different manufacturer

Datasheet 2SC4784 - Renesas 2SC4784

2SC4784 Silicon NPN Epitaxial REJ03G0730-0300 (Previous ADE-208-1121A) Rev.3.00 Aug.10.2005 Application VHF / UHF wide .

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