2SC4782 - Panasonic Semiconductor

2SC4782 NPN TRANSISTOR

Transistor 2SC4782 Silicon NPN epitaxial planer type For high speed switching Unit: mm s Features q q q 2.8 –0.3 0.65±0.15 +0.2 +0.25 1.5 –0.05 0.65±0.15 2 Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature VCBO V.

Features

q q q 2.8
  –0.3 0.65±0.15 +0.2 +0.25 1.5
  –0.05 0.65±0.15 2 Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature VCBO VCES VEBO ICP IC PC Tj Tstg 25 20 5 300 200 200 150
  –55 ~ +150 V V V mA mA mW ˚C ˚C 1:Base 2:Emitter 3:Collector JEDEC:TO
  –236 EIAJ:SC
  –59 Mini Type Package Marking symbol : DV s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Bas.