The 2SC4783 is NPN silicon epitaxial transistor. PACKAGE DRAWING (Unit: mm) 0.3 ± 0.05 0.1 +0.1 –0.05 FEATURES 1.6 ± 0.1 0.8 ± 0.1 • High DC current gain: hFE2 = 200 TYP. • High voltage: VCEO = 50 V 3 0 to 0.1 2 0.2 +0.1 –0 0.5 0.5 1.0 1.6 ± 0.1 0.6 0.75 ± 0.05 1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage Collector to Emitter Voltage.
1.6 ± 0.1 0.8 ± 0.1
• High DC current gain: hFE2 = 200 TYP.
• High voltage: VCEO = 50 V
3 0 to 0.1 2 0.2 +0.1
–0 0.5 0.5 1.0 1.6 ± 0.1 0.6 0.75 ± 0.05 1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse)
Note1 Note2
VCBO VCEO VEBO IC(DC) IC(pulse) PT Tj Tstg
60 50 5.0 100 200 200 150
–55 to + 150
V V V mA mA mW °C °C
Total Power Dissipation (TA = 25°C) Junction Temperature Storage Temperature Range
1: Emitter 2: Base 3: Collector
Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50% 2 2. .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC4781 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
2 | 2SC4782 |
Panasonic Semiconductor |
NPN TRANSISTOR | |
3 | 2SC4782 |
Kexin |
Silicon NPN Transistor | |
4 | 2SC4784 |
Hitachi Semiconductor |
NPN TRANSISTOR | |
5 | 2SC4784 |
Renesas |
Silicon NPN Transistor | |
6 | 2SC4786 |
ETC |
NPN TRANSISTOR | |
7 | 2SC4787 |
Panasonic Semiconductor |
NPN TRANSISTOR | |
8 | 2SC4789 |
Hitachi |
Silicon NPN Transistor | |
9 | 2SC4789 |
INCHANGE |
NPN Transistor | |
10 | 2SC4702 |
Hitachi Semiconductor |
NPN TRANSISTOR | |
11 | 2SC4702 |
Renesas |
NPN Transistor | |
12 | 2SC4702 |
Kexin |
NPN Transistor |