·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min.) ·High Switching Speed ·High Reliability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta.
istor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER INCHANGE Semiconductor 2SC4603R CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 800 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 900 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 10 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A 1.5 V ICBO Collector Cutoff Current VCB= 900V; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 10V; IC= 0 1.0.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC4603 |
Fuji Electric |
NPN TRANSISTOR | |
2 | 2SC4603 |
New Jersey Semi-Conductor |
TRIPLE DIFFUSED PLANER TYPE TRANSISTOR | |
3 | 2SC460 |
Hitachi Semiconductor |
NPN TRANSISTOR | |
4 | 2SC460 |
Renesas |
Silicon NPN epitaxial planar type Transistor | |
5 | 2SC4600 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
6 | 2SC4600 |
Kexin |
NPN Triple Diffused Planar Silicon Transistor | |
7 | 2SC4601 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
8 | 2SC4601 |
Kexin |
NPN Triple Diffused Planar Silicon Transistor | |
9 | 2SC4602 |
Sanyo Semicon Device |
NPN TRANSISTOR | |
10 | 2SC4602 |
Kexin |
NPN Triple Diffused Planar Silicon Transistor | |
11 | 2SC4604 |
Toshiba Semiconductor |
NPN TRANSISTOR | |
12 | 2SC4605 |
Toshiba Semiconductor |
NPN TRANSISTOR |