Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
2SC4603R |
Click to view a larger image
| Part Number | 2SC4603R |
| Manufacturer | Inchange Semiconductor |
| Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min.) ·High Switching Speed ·High Reliability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliab... |
| Features |
istor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
INCHANGE Semiconductor
2SC4603R
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
800
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
900
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
10
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A
1.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 1A; IB= 0.2A
1.5
V
ICBO
Collector Cutoff Current
VCB= 900V; IE= 0
1.0 mA
IEBO
Emitter Cutoff Current
VEB= 10V; IC= 0
1.0... |
| Document |
 2SC4603R Data Sheet
PDF 190.43KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC4603 |
Fuji Electric |
NPN TRANSISTOR |
|
| 2 | 2SC4603 |
New Jersey Semi-Conductor |
TRIPLE DIFFUSED PLANER TYPE TRANSISTOR |
|
| 3 | 2SC460 |
Hitachi Semiconductor |
NPN TRANSISTOR |
|
| 4 | 2SC460 |
Renesas |
Silicon NPN epitaxial planar type Transistor |
|
| 5 | 2SC4600 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|