2SC4604 - Toshiba Semiconductor

2SC4604 NPN TRANSISTOR

2SC4604 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4604 Power Amplifier Application. Power Switching Applications. Unit: mm • • • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1.5 A) High-speed switching: tstg = 0.5 µs (typ.) Complementary to 2SA1761 Maximum Ratings (Ta = 25°C) Characteristics Collector-base .

Features

CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob ton IB1 Test Condition VCB = 80 V, IE = 0 VEB = 6 V, IC = 0 IC = 10 mA, IE = 0 VCE = 2 V, IC = 100 mA VCE = 2 V, IC = 2 A IC = 1.5 A, IB = 75 mA IC = 1.5 A, IB = 75 mA VCE = 2 V, IC = 100 mA VCB = 10 V, IE = 0, f = 1 MHz Output 30 Ω Min ― ― 50 120 40 ― ― ― ― ― Typ. ― ― ― ― ― ― ― 100 20 0.1 Max 0.1 0.1 ― 400 ― 0.5 1.2 ― ― ― V V MHz pF Unit µA µA V 20 µs www.DataSheet4U.com Switching time Storage time tstg Input IB2 IB1 IB2 ― 0.5 ― µs 30 V Fall time tf IB1 = −IB2 = 75 mA, duty cycle ≤ 1% ― 0.1 ― 1 2004-07-26 2SC4604 Marking C4604 Part.