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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 550V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VA.
nductor 2SC4557 CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 550 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A 1.2 V ICBO Collector Cutoff Current VCB= 800V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 100 μA hFE DC Current Gain IC= 5A; VCE= 4V 10 28 fT Current-Gain—Bandwidth Product IE= -1A; VCE= 12V 6 MHz COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz 105 pF Switching Times ton Turn-on Time 1.0 μs tstg Storage .
2SC4557 - SavantIC
·With TO-3PML package ·High voltage switchihg transistor APPLICATIONS ·For switching regulator and general purpose appli.
2SC4557 - Sanken electric
2SC4557 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC4550 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 2 | 2SC4550 |
Comset Semiconductors |
Silicon Transistor |
|
| 3 | 2SC4550 |
Renesas |
SILICON POWER TRANSISTOR |
|
| 4 | 2SC4550 |
INCHANGE |
NPN Transistor |
|
| 5 | 2SC4551 |
NEC |
NPN Transistor |
|
| 6 | 2SC4552 |
NEC |
NPN Transistor |
|
| 7 | 2SC4552 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SC4552 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SC4552 |
Renesas |
SILICON POWER TRANSISTOR |
|
| 10 | 2SC4553 |
NEC |
NPN Silicon Transistor |
|
| 11 | 2SC4554 |
ETC |
NPN Transistor |
|
| 12 | 2SC4554 |
NEC |
NPN Transistor |
|