·With TO-220F package ·Low collector saturation voltage ·High speed switching APPLICATIONS ·Suited for use in drivers such as DC-DC converters and actuators PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Coll.
voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=4A; IB=0.4A,L=1mH IC=4A; IB=0.2 A IC=6A; IB=0.3A IC=4A; IB=0.2 A IC=6A; IB=0.3A VCB=60V; IE=0 VCE=60V; VBE=-1.5V Ta=125 VEB=5V; IC=0 IC=0.7A ; VCE=2V IC=1.5A ; VCE=2V IC=4A ; VCE=2V IE=0; VCB=10V;f=1MHz IC=1A ; VCE=10V 100 100 60 MIN 60 SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO ICEX IEBO hFE-1 hF.
NPN 2SC4550 SILCON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4550 is a power transistor developed for high-s.
DATA SHEET SILICON POWER TRANSISTOR 2SC4550 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4550 is a .
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) ·High DC Current Gain- : hFE= 100(Min)@ (VCE= 2V , IC= 1.5A.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC4551 |
NEC |
NPN Transistor | |
2 | 2SC4552 |
NEC |
NPN Transistor | |
3 | 2SC4552 |
SavantIC |
SILICON POWER TRANSISTOR | |
4 | 2SC4552 |
INCHANGE |
NPN Transistor | |
5 | 2SC4552 |
Renesas |
SILICON POWER TRANSISTOR | |
6 | 2SC4553 |
NEC |
NPN Silicon Transistor | |
7 | 2SC4554 |
ETC |
NPN Transistor | |
8 | 2SC4554 |
NEC |
NPN Transistor | |
9 | 2SC4555 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistor | |
10 | 2SC4555 |
Kexin |
NPN Epitaxial Planar Silicon Transistor | |
11 | 2SC4555 |
GME |
NPN Silicon Transistor | |
12 | 2SC4557 |
Sanken electric |
NPN TRANSISTOR |