2SC4553 - NEC

2SC4553 NPN Silicon Transistor

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for.

Features

large current switching at a low power dissipation. In addition, a high hFE enables alleviation of the driver load. FEATURES
• High hFE and low VCE(sat): hFE ≅ 800 (VCE = 2 V, IC = 3 A) VCE(sat) ≅ 0.12 V (IC = 3 A, IB = 0.03 A)
• On-chip C to E damper diode
• Mold package that does not require an insulating board or insulation bushing ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Total power dissipation Junction temperatur.