2SC4501S - Hitachi Semiconductor

2SC4501S Silicon NPN Transistor

www.DataSheet4U.com 2SC4501(L)/(S) Silicon NPN Epitaxial Application High gain amplifier and medium speed switching Outline DPAK 4 4 1 2 3 12 1. Base 2. Collector 3. Emitter 4. Collector 2, 4 1 S Type 3 3 L Type 2SC4501(L)/(S) Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage C.

Features

CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage V(BR)EBO ICEO hFE VCE (sat) VCE (sat) Base to emitter saturation voltage VBE (sat) VBE (sat) Turn on time Turn off time Storage time Note: 1. Pulse test. ton toff tstg IC = 1.5 A, IB = 3 mA
* IC = 3 A, IB = 30 mA
* 1 1 IC = 1.5 A, IB = 3 mA
* IC = 3 A, IB = 30 mA
* IC = 1.5 A, IB1 =
  –IB2 = 3 mA, VCC = 30 V 1 1 2 2SC4501(L)/(S) Maximum Collector Dissipation Curve 12 Collector power dissipation Pc (W) 8 4 0 50 100 Case Temperature TC (°C) Area of Safe Ope.