Transistor 2SC4502 Silicon NPN epitaxial planer type For mtermediate frequency amplification Unit: mm 6.9±0.1 0.15 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.5 4.5±0.1 s Features q q q 0.7 4.0 0.65 max. 1.0 1.0 High transition frequency fT. Large collector power dissipation PC. Allowing supply with the radial taping. 0.2 s Absolute Maximum Ratings Parameter .
q q q
0.7
4.0
0.65 max.
1.0 1.0
High transition frequency fT. Large collector power dissipation PC. Allowing supply with the radial taping.
0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature
*
(Ta=25˚C)
Ratings 50 45 4 50 1 150
–55 ~ +150 Unit
0.45
–0.05
0.45
–0.05
+0.1
+0.1
Symbol VCBO VCEO VEBO IC PC
* Tj Tstg
2.5±0.5 1 2
2.5±0.5 3
V V mA W ˚C ˚C
Note: In addition to the lead type shown in the upper figure, the type as shown in.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC4500 |
Hitachi Semiconductor |
NPN TRANSISTOR | |
2 | 2SC4500 |
Renesas |
Silicon NPN Transistor | |
3 | 2SC4500L |
Hitachi Semiconductor |
NPN TRANSISTOR | |
4 | 2SC4500L |
Renesas |
Silicon NPN Transistor | |
5 | 2SC4500S |
Hitachi Semiconductor |
NPN TRANSISTOR | |
6 | 2SC4500S |
Renesas |
Silicon NPN Transistor | |
7 | 2SC4501 |
Hitachi Semiconductor |
Silicon NPN Transistor | |
8 | 2SC4501 |
Renesas |
Silicon NPN Transistor | |
9 | 2SC4501L |
Hitachi Semiconductor |
Silicon NPN Transistor | |
10 | 2SC4501L |
Renesas |
Silicon NPN Transistor | |
11 | 2SC4501S |
Hitachi Semiconductor |
Silicon NPN Transistor | |
12 | 2SC4501S |
Renesas |
Silicon NPN Transistor |