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2SC4501S |
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| Part Number | 2SC4501S |
| Manufacturer | Hitachi Semiconductor |
| Description | www.DataSheet4U.com 2SC4501(L)/(S) Silicon NPN Epitaxial Application High gain amplifier and medium speed switching Outline DPAK 4 4 1 2 3 12 1. Base 2. Collector 3. Emitter 4. Collector 2, 4 1 ... |
| Features |
CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage V(BR)EBO ICEO hFE VCE (sat) VCE (sat) Base to emitter saturation voltage VBE (sat) VBE (sat) Turn on time Turn off time Storage time Note: 1. Pulse test. ton toff tstg
IC = 1.5 A, IB = 3 mA* IC = 3 A, IB = 30 mA*
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IC = 1.5 A, IB = 3 mA* IC = 3 A, IB = 30 mA* IC = 1.5 A, IB1 = –IB2 = 3 mA, VCC = 30 V 1 1 2 2SC4501(L)/(S) Maximum Collector Dissipation Curve 12 Collector power dissipation Pc (W) 8 4 0 50 100 Case Temperature TC (°C) Area of Safe Ope... |
| Document |
 2SC4501S Data Sheet
PDF 54.13KB |
| Distributor | Stock | Price | Buy |
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