2SC4308 Silicon NPN Transistor Datasheet

2SC4308 Silicon NPN Transistor

2SC4308 Silicon NPN Epitaxial Planar Application VHF Wide band amplifier Outline TO-92 (2) 1. Base 2. Emitter 3. Collector 3 2 1 2SC4308 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage .

Features

= 50 mA VCB = 10 V, IE = 0, f = 1 MHz 2 2SC4308 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 600 Collector Current IC (mA) Typical Output Characteristics 200 0 5 4. 3. 3.0 2.5 2.0 1.5 100 0.1 400 200 0.5mA IB = 0 0 50 100 150 Ambient Temperature Ta (°C) 0 1.0 2.0 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current 1,000 Base to Emitter Voltage VBE (V) DC Current Transfer Ratio hFE VCE = 5 V Pulse Test Ta = 75°C 100 25
–25 10 Base to Emitter Voltage vs. Collector Current VCE = 5 V Pulse Test Ta =
–25°C 1.0 75 25 10 1 10 .

The same part from a different manufacturer

2SC4308 - Renesas

2SC4308 Silicon NPN Epitaxial Planar REJ03G0723-0200 (Previous ADE-208-1103) Rev.2.00 Aug.10.2005 Application VHF Wide .

2SC4308 - INCHANGE

·Low Noise ·High Gain Bandwidth Product ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performa.

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2SC4308 - Hitachi Semiconductor