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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 90.
mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A ICBO Collector Cutoff Current VCB= 800V; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE DC Current Gain IC= 2A; VCE= 4V COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz fT Current-Gain—Bandwidth Product IE= -0.5A; VCE= 12V Switching Times ton Turn-On Time tstg Storage Time tf Fall Time IC= 2A; IB1= 0.3A; IB2= -1A; VCC= 250V; RL= 125Ω 2SC4300 MIN TYP. MAX UNIT 800 V 0.5 V 1.2 V 100 μA 100 μA 10 30 75 pF 6 MHz 1.0 μs 5..
2SC4300 - Sanken electric
2SC4300 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=.
2SC4300 - SavantIC
·With TO-3PML package ·High voltage switchihg transistor APPLICATIONS ·For switching regulator and general purpose appli.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC4301 |
Sanken electric |
Silicon NPN Transistor |
|
| 2 | 2SC4301 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SC4301 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SC4303 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SC4303 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SC4304 |
Sanken electric |
Silicon NPN Transistor |
|
| 7 | 2SC4304 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SC4304 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SC4306 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 10 | 2SC4306 |
Kexin |
Transistors |
|
| 11 | 2SC4308 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 12 | 2SC4308 |
Renesas |
Silicon NPN Transistor |
|