2SC4303 - INCHANGE

2SC4303 NPN Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140.

Features

itter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A ICBO Collector Cutoff Current VCB= 1200V; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE DC Current Gain IC= 2.5A; VCE= 4V fT Current-Gain—Bandwidth Product IE= -0.5A; VCE= 12V Switching Times tstg Storage Time tf Fall Time IC= 2.5A; IB1= 0.5A; IB2= -1A; VCC= 250V; RL= 100Ω MIN TYP. MAX UNIT 800 V 1.0 V 1.5 V 100 μA 100 μA 6 4 MHz 4.0 μs 0.3 μs NOTICE： ISC reserves the rights to make changes.