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SMD Type NPN Silicon Epitaxia 2SC4179 Transistors IC Features High gain bandwidth product. Low output capacitance. Low noise figure. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperatur.
High gain bandwidth product. Low output capacitance. Low noise figure.
1 Emitter 2 Base 3 Collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 50 30 5 50 150 150 -55 to +150 Unit V V V mA mW
Electrical Characteristics Ta = 25
Parameter Collector cutoff current Emitter cutoff current DC current gain
* Base-emitter voltage
* Collector-emitter saturation voltage
* Gain bandwidth product Output capacit.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC4171 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 2 | 2SC4172 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 3 | 2SC4173 |
NEC |
HIGH FREQUENCY AMPLIFIER AND SWITCHING NPN SILICON EPITAXIAL TRANSISTOR |
|
| 4 | 2SC4173 |
Kexin |
NPN SILICON EPITAXIAL TRANSISTOR |
|
| 5 | 2SC4175 |
NEC |
HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR |
|
| 6 | 2SC4176 |
NEC |
HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR |
|
| 7 | 2SC4177 |
SeCoS |
NPN Transistor |
|
| 8 | 2SC4177 |
Jin Yu Semiconductor |
TRANSISTOR |
|
| 9 | 2SC4177 |
AiT Components |
NPN TRANSISTOR |
|
| 10 | 2SC4177W |
Galaxy Semi-Conductor |
Silicon Epitaxial Planar Transistor |
|
| 11 | 2SC4178 |
NEC |
HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
|
| 12 | 2SC4178 |
Kexin |
NPN SILICON EPITAXIAL TRANSISTOR |
|
