SMD Type NPN Silicon Epitaxia 2SC4178 Transistors IC Features Micro package. High gain bandwidth product. Low output capacitance. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature S.
Micro package. High gain bandwidth product. Low output capacitance.
1 Emitter 2 Base 3 Collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 30 20 4 20 150 150 -55 to +150 Unit V V V mA mW
Electrical Characteristics Ta = 25
Parameter Collector cutoff current DC current gain
* Collector-emitter saturation voltage
* Gain bandwidth product Output capacitance Collector to base time constant Noise figure.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC4171 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
2 | 2SC4172 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor | |
3 | 2SC4173 |
NEC |
HIGH FREQUENCY AMPLIFIER AND SWITCHING NPN SILICON EPITAXIAL TRANSISTOR | |
4 | 2SC4173 |
Kexin |
NPN SILICON EPITAXIAL TRANSISTOR | |
5 | 2SC4175 |
NEC |
HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR | |
6 | 2SC4176 |
NEC |
HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR | |
7 | 2SC4177 |
SeCoS |
NPN Transistor | |
8 | 2SC4177 |
Jin Yu Semiconductor |
TRANSISTOR | |
9 | 2SC4177 |
AiT Components |
NPN TRANSISTOR | |
10 | 2SC4177W |
Galaxy Semi-Conductor |
Silicon Epitaxial Planar Transistor | |
11 | 2SC4179 |
NEC |
NPN SILICON EPITAXIAL TRANSISTOR | |
12 | 2SC4179 |
Kexin |
NPN SILICON EPITAXIAL TRANSISTOR |