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Ordering number:EN2546A NPN Triple Diffused Planar Silicon Transistor 2SC4172 500V/5A Switching Regulator Applications Features · High breakdown voltage (VCBO≥800V). · Fast switching speed. · Wide ASO. · Suitable for sets whose height is restricted. Package Dimensions unit:mm 2049C [2SC4172] 10.2 4.5 1.3 1.6 0.9 11.0 8.8 20.9 11.5 1.2 9.4 0.8 0.4 .
· High breakdown voltage (VCBO≥800V).
· Fast switching speed.
· Wide ASO.
· Suitable for sets whose height is restricted.
Package Dimensions
unit:mm 2049C
[2SC4172]
10.2
4.5 1.3
1.6 0.9
11.0 8.8
20.9 11.5
1.2
9.4
0.8 0.4
Specifications
123 2.55 2.55
2.7
1 : Base 2 : Collector 3 : Emitter SANYO : TO-220MF
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation
Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP IB .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC4171 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 2 | 2SC4173 |
NEC |
HIGH FREQUENCY AMPLIFIER AND SWITCHING NPN SILICON EPITAXIAL TRANSISTOR |
|
| 3 | 2SC4173 |
Kexin |
NPN SILICON EPITAXIAL TRANSISTOR |
|
| 4 | 2SC4175 |
NEC |
HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR |
|
| 5 | 2SC4176 |
NEC |
HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR |
|
| 6 | 2SC4177 |
SeCoS |
NPN Transistor |
|
| 7 | 2SC4177 |
Jin Yu Semiconductor |
TRANSISTOR |
|
| 8 | 2SC4177 |
AiT Components |
NPN TRANSISTOR |
|
| 9 | 2SC4177W |
Galaxy Semi-Conductor |
Silicon Epitaxial Planar Transistor |
|
| 10 | 2SC4178 |
NEC |
HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
|
| 11 | 2SC4178 |
Kexin |
NPN SILICON EPITAXIAL TRANSISTOR |
|
| 12 | 2SC4179 |
NEC |
NPN SILICON EPITAXIAL TRANSISTOR |
|