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·High Switching Speed ·High Breakdown Voltage : V(BR)CBO= 1500V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage .
oltage IC= 12A; IB=3A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 12A; IB=3A 1.5 V ICBO Collector Cutoff Current VCB= 800V; IE= 0 10 μA ICES Collector Cutoff Current VCE= 1500V; RBE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 1A; VCE= 5V 8 40 hFE-2 DC Current Gain IC= 12A; VCE= 5V 4 8 tstg Storage Time tf Fall Time IC= 12A, IB1=2.4A; IB2= -4.8A 3.0 μs 0.2 μs NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is.
2SC3996 - Sanyo Semicon Device
Ordering number:EN2509C NPN Triple Diffused Planar Silicon Transistor 2SC3996 Ultrahigh-Definition CRT Display Horizont.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3990 |
Sanyo Semicon Device |
Silicon NPN Transistor |
|
| 2 | 2SC3990 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 3 | 2SC3991 |
Sanyo Semicon Device |
Silicon NPN Transistor |
|
| 4 | 2SC3991 |
Inchange Semiconductor |
Silicon NPM Power Transistor |
|
| 5 | 2SC3992 |
Sanyo Semicon Device |
Silicon NPN Transistor |
|
| 6 | 2SC3992 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 7 | 2SC3993 |
Sanyo Semicon Device |
Silicon NPN Transistor |
|
| 8 | 2SC3993 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SC3994 |
Sanyo Semicon Device |
Silicon NPN Transistor |
|
| 10 | 2SC3994 |
Inchange Semiconductor |
Silicon NPN Transistor |
|
| 11 | 2SC3995 |
Sanyo Semicon Device |
Silicon NPN Transistor |
|
| 12 | 2SC3995 |
Inchange Semiconductor |
Silicon NPN Transistor |
|