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·High Switching Speed ·High Breakdown Voltage- : V(BR)CBO= 1100V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·800V/16A switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEB.
Saturation Voltage IC= 6A; IB=1.2A VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB=1.2A ICBO Collector Cutoff Current VCB= 800V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1.2A; VCE= 5V hFE-2 DC Current Gain IC= 6A; VCE= 5V tstg Storage Time tf Fall Time IC= 10A, IB1=2A; IB2= -4A MIN TYP. MAX UNIT 800 V 2.0 V 1.5 V 10 μA 10 μA 10 40 8 3.0 μs 0.3 μs hFE-1 Classifications K L M 10-20 15-30 20-40 isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconducto.
2SC3993 - Sanyo Semicon Device
Ordering number:EN2236D NPN Triple Diffused Planar Silicon Transistor 2SC3993 800V/16A Switching Regulator Applications.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3990 |
Sanyo Semicon Device |
Silicon NPN Transistor |
|
| 2 | 2SC3990 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 3 | 2SC3991 |
Sanyo Semicon Device |
Silicon NPN Transistor |
|
| 4 | 2SC3991 |
Inchange Semiconductor |
Silicon NPM Power Transistor |
|
| 5 | 2SC3992 |
Sanyo Semicon Device |
Silicon NPN Transistor |
|
| 6 | 2SC3992 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 7 | 2SC3994 |
Sanyo Semicon Device |
Silicon NPN Transistor |
|
| 8 | 2SC3994 |
Inchange Semiconductor |
Silicon NPN Transistor |
|
| 9 | 2SC3995 |
Sanyo Semicon Device |
Silicon NPN Transistor |
|
| 10 | 2SC3995 |
Inchange Semiconductor |
Silicon NPN Transistor |
|
| 11 | 2SC3996 |
Sanyo Semicon Device |
Silicon NPN Transistor |
|
| 12 | 2SC3996 |
Inchange Semiconductor |
Silicon NPN Transistor |
|