Ordering number:EN2828 NPN Triple Diffused Planar Silicon Transistor 2SC3994 800V/25A Switching Regulator Applications Features · High breakdown voltage, high reliability. · Fast switching speed (tf=0.1µs typ). · Wide ASO. · Adoption of MBIT process. Package Dimensions unit:mm 2048B [2SC3994] Specifications Absolute Maximum Ratings at Ta = 25˚C Paramet.
· High breakdown voltage, high reliability.
· Fast switching speed (tf=0.1µs typ).
· Wide ASO.
· Adoption of MBIT process.
Package Dimensions
unit:mm 2048B
[2SC3994]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP IB PC Tj
Tstg
Conditions
PW≤300µs, duty cycle≤10% Tc=25˚C
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PBL
Ratings 1100 800 7 25 60 1.
·High Switching Speed ·High Breakdown Voltage- : V(BR)CBO= 1100V(Min) ·Minimum Lot-to-Lot variations for robust device p.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC3990 |
Sanyo Semicon Device |
Silicon NPN Transistor | |
2 | 2SC3990 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
3 | 2SC3991 |
Sanyo Semicon Device |
Silicon NPN Transistor | |
4 | 2SC3991 |
Inchange Semiconductor |
Silicon NPM Power Transistor | |
5 | 2SC3992 |
Sanyo Semicon Device |
Silicon NPN Transistor | |
6 | 2SC3992 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
7 | 2SC3993 |
Sanyo Semicon Device |
Silicon NPN Transistor | |
8 | 2SC3993 |
INCHANGE |
NPN Transistor | |
9 | 2SC3995 |
Sanyo Semicon Device |
Silicon NPN Transistor | |
10 | 2SC3995 |
Inchange Semiconductor |
Silicon NPN Transistor | |
11 | 2SC3996 |
Sanyo Semicon Device |
Silicon NPN Transistor | |
12 | 2SC3996 |
Inchange Semiconductor |
Silicon NPN Transistor |