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Ordering number:EN1968A NPN Triple Diffused Planar Silicon Transistor 2SC3749 500V/3A Switching Regulator Applications Features · High breakdown voltage and high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process. · Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SC3749] Specifications 1 : Base 2 : Col.
· High breakdown voltage and high reliability.
· Fast switching speed.
· Wide ASO.
· Adoption of MBIT process.
· Micaless package facilitating mounting.
Package Dimensions
unit:mm 2041A
[2SC3749]
Specifications
1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP IB PC Tj
Tstg
Conditions
PW≤300µs, Duty Cycle≤10% Tc=2.
2SC3749 - INCHANGE
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3743 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SC3743 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SC3746 |
Sanyo Semicon Device |
NPN Transistor |
|
| 4 | 2SC3746 |
INCHANGE |
NPN Transistor |
|
| 5 | 2SC3746 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SC3747 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 7 | 2SC3747 |
INCHANGE |
Silicon NPN Power Transistor |
|
| 8 | 2SC3748 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 9 | 2SC3748 |
INCHANGE |
NPN Transistor |
|
| 10 | 2SC3748 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 11 | 2SC3704 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 12 | 2SC3705 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Darlington Transistor |
|