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· ·Collector-Emiiter Breakdown Voltage- : V(BR)CEO= 800V(Min.) ·Wide Area of Safe Operation ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Vol.
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 800 V VCE(sat) Collector-Emitter Saturation Voltage IC= 0.8A; IB= 0.16A 0.6 V VBE(sat) Base-Emitter Saturation Voltage IC= 0.8A; IB= 0.16A 1.2 V ICBO Collector Cutoff Current VCB= 900V; IE= 0 50 μA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 50 μA hFE-1 DC Current Gain IC= 0.1A; VCE= 5V 6 hFE-2 DC Current Gain IC= 0.8A; VCE= 5V 6 Switching Times ton Turn-on Time ts Storage Time tf Fall Time IC= 0.8A; IB1= 0.16A;IB2= -0.32A; VCC= 250V 1.0 μs 4.0 μs 1.0 μs NOTICE： ISC reserves the rights to make chang.
2SC3743 - Panasonic Semiconductor
Power Transistors 2SC3743 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Uni.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC3746 |
Sanyo Semicon Device |
NPN Transistor |
|
| 2 | 2SC3746 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SC3746 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SC3747 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 5 | 2SC3747 |
INCHANGE |
Silicon NPN Power Transistor |
|
| 6 | 2SC3748 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 7 | 2SC3748 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SC3748 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SC3749 |
Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
|
| 10 | 2SC3749 |
INCHANGE |
NPN Transistor |
|
| 11 | 2SC3704 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 12 | 2SC3705 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Darlington Transistor |
|