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Power Transistors 2SC3738 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching For horizontal deflection output s Features 20.0±0.5 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 3.0 2.0 4.0 10.0 6.0 q High-speed switching q Wide area of safe operation (ASO) with high breakdown voltage q Satisfactory linearity of foward current t.
20.0±0.5 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 3.0 2.0 4.0 10.0 6.0 q High-speed switching q Wide area of safe operation (ASO) with high breakdown voltage q Satisfactory linearity of foward current transfer ratio hFE 26.0±0.5 1.5 / s Absolute Maximum Ratings (TC=25˚C) 2.0±0.3 1.5 Parameter Symbol Ratings Unit e e) Collector to base voltage VCBO 20.0±0.5 2.5 Solder Dip 1.5 2.0 1200 V c typ Collector to emitter voltage VCEO 800 V n d stage. tinued Emitter to base voltage VEBO 7 V le on Peak collector current ICP 15 A a elifecyc disc Collector current IC 10 A n u .
2SC3738 - Inchange Semiconductor
·High Voltage, High Speed Switching ·Wide Area of Safe Operation ·Good Linearity of hFE ·Minimum Lot-to-Lot variations f.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC373 |
ETC |
Silicon NPN Transistor |
|
| 2 | 2SC3731 |
NEC |
NPN SILICON TRANSISTOR |
|
| 3 | 2SC3732 |
NEC |
NPN SILICON TRANSISTOR |
|
| 4 | 2SC3733 |
NEC |
NPN SILICON TRANSISTOR |
|
| 5 | 2SC3734 |
NEC |
NPN Transistor |
|
| 6 | 2SC3734 |
Kexin |
NPN Silicon Transistor |
|
| 7 | 2SC3734LT1 |
WEJ |
NPN EPITAXIAL SILICON TRANSISTOR |
|
| 8 | 2SC3735 |
NEC |
NPN Transistor |
|
| 9 | 2SC3736 |
NEC |
HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR |
|
| 10 | 2SC3736 |
Guangdong Kexin Industrial |
NPN Silicon Epitaxial Transistor |
|
| 11 | 2SC3737 |
Inchange Semiconductor |
Power Transistor |
|
| 12 | 2SC3737 |
Panasonic |
Silicon PNP Transistor |
|