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www.DataSheet4U.com SMD Type NPN Silicon Epitaxia 2SC3736 Transistors Features High speed,high voltage switching. Low collector saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (Pulse)* Total power dissipation Junction temperature Stora.
High speed,high voltage switching. Low collector saturation voltage.
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (Pulse)
* Total power dissipation Junction temperature Storage temperature
* PW 10ms,duty cycle 50%. Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg Rating 80 45 5 1 2 2 150 -55 to +150 Unit V V V A A W
Electrical Characteristics Ta = 25
Parameter Collector cutoff current Emitter cutoff current DC current gain
* Collector-emitter saturation voltage
* Base-emitter saturation voltage
* Ga.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SC373 |
ETC |
Silicon NPN Transistor |
|
| 2 | 2SC3731 |
NEC |
NPN SILICON TRANSISTOR |
|
| 3 | 2SC3732 |
NEC |
NPN SILICON TRANSISTOR |
|
| 4 | 2SC3733 |
NEC |
NPN SILICON TRANSISTOR |
|
| 5 | 2SC3734 |
NEC |
NPN Transistor |
|
| 6 | 2SC3734 |
Kexin |
NPN Silicon Transistor |
|
| 7 | 2SC3734LT1 |
WEJ |
NPN EPITAXIAL SILICON TRANSISTOR |
|
| 8 | 2SC3735 |
NEC |
NPN Transistor |
|
| 9 | 2SC3737 |
Inchange Semiconductor |
Power Transistor |
|
| 10 | 2SC3737 |
Panasonic |
Silicon PNP Transistor |
|
| 11 | 2SC3738 |
Inchange Semiconductor |
Silicon NPN Transistor |
|
| 12 | 2SC3738 |
Panasonic |
Silicon NPN Transistor |
|
