SMD Type NPN Silicon Epitaxia 2SC3734 Transistors IC SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm Features +0.1 2.4-0.1 +0.1 1.3-0.1 High speed : tstg 200ns. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter volta.
+0.1 2.4-0.1
+0.1 1.3-0.1
High speed : tstg
200ns.
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation at 25 ambient temperature Tj Tstg 150 -55 to +150 Symbol VCBO VCEO VEBO IC PT Rating 60 40 6 200 200 Unit V V V mA mW
Junction temperature Storage temperature
Electrical Characteristics Ta = 25
Parameter Collector cutoff current Emitter cutoff current DC current gain
* Collector-.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SC373 |
ETC |
Silicon NPN Transistor | |
2 | 2SC3731 |
NEC |
NPN SILICON TRANSISTOR | |
3 | 2SC3732 |
NEC |
NPN SILICON TRANSISTOR | |
4 | 2SC3733 |
NEC |
NPN SILICON TRANSISTOR | |
5 | 2SC3734LT1 |
WEJ |
NPN EPITAXIAL SILICON TRANSISTOR | |
6 | 2SC3735 |
NEC |
NPN Transistor | |
7 | 2SC3736 |
NEC |
HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR | |
8 | 2SC3736 |
Guangdong Kexin Industrial |
NPN Silicon Epitaxial Transistor | |
9 | 2SC3737 |
Inchange Semiconductor |
Power Transistor | |
10 | 2SC3737 |
Panasonic |
Silicon PNP Transistor | |
11 | 2SC3738 |
Inchange Semiconductor |
Silicon NPN Transistor | |
12 | 2SC3738 |
Panasonic |
Silicon NPN Transistor |